Heteroglossia in Choukri’s Al-Khubz al- Hafi: A Reflection on Moroccan Plurilingualism

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Media Reflection of Syrian Crisis in B.B.C Arabic, al-Arabyia and al-Alam Websites

Along with waves of Islamic awaking in the ME during 2011 and 2012, a series of events took place in Syria which were completely different from this wave and tackled this country with numerous problems for a long time. To display media reflection of Syrian crisis, this article has studied 95 analytic editorial from al-Alam, al-Arabyia and BBC Arabic websites in a six month period from October 1...

متن کامل

A review and criticism of Wahba Zuḥaylī's method in al-Tafsīr al-Munīr fī al-‘Aqīda wa al-Sharī‘a wa al-Munhaj

The science of interpretation has a special position in the Islamic sciences and has been addressed seriously by Muslims from the very first days of Islam, because interpretation is to understand and discover the points of the best speech, i.e. the speech of the Sublime Allāh. One of the new commentaries on Muslims' divine book is al-Tafsīr al-munīr fī al-‘aqīda wa al-sharī‘a wa al-munhaj, auth...

متن کامل

Andreev reflection in engineered Al/Si/InGaAs(001) junctions

Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in lowdoped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited f...

متن کامل

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Andreev-reflection dominated transport is demonstrated in Al/nIn0.38Ga0.62As superconductor-semiconductor junctions grown by molecularbeam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Social Science Research Network

سال: 2023

ISSN: ['1556-5068']

DOI: https://doi.org/10.2139/ssrn.4386618